Samsung 860 EVO 250 GB SATA SSD MZ-76E250BW

Samsung 860 EVO 250 GB SATA SSD MZ-76E250BW, SSD 860 EVO SATA III 2.5 inch 250 GB
The SSD to trust
The newest edition to the world’s best-selling* SATA SSD series, the Samsung 860 EVO. Specially designed for mainstream PCs and laptops, with the latest V-NAND and a robust algorithm-based controller, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.

Enhanced performance
Speeds are more consistent, even with heavy workloads and multi-tasks. The 860 EVO performs at sequential writes up to 520 MB/s* with Intelligent TurboWrite technology, and sequential reads up to 550 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB for faster file transfer.

Boosted endurance
Safely store and render large sized 4K videos and 3D data used by the latest applications, up to 8x higher TBW (Terabytes Written)* than the previous 850 EVO. The latest V-NAND technology gives you up to 2,400 TBW, or is backed by a 5-year limited warranty.*

Smart compatibility
Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility. Our advanced engineering makes the 860 EVO more compatible with your computing system.

Multi form factors
Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.

SPECIFICATIONS

Application: Client PCs
Capacity: 250 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor: 2.5 inch
Interface: SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
Dimension: (WxHxD) 100 X 69.85 X 6.8 (mm)
Weight: Max 50.0 g Weight
NAND Type Samsung V-NAND 3bit MLC
Controller Samsung MJX Controller
Cache Memory: Samsung 512 MB Low Power DDR4 SDRAM
TRIM Support: TRIM Supported
S.M.A.R.T Support: S.M.A.R.T Supported
GC (Garbage Collection): Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
WWN Support World Wide Name supported
Device Sleep Mode Support Yes
Sequential Read Up to 550 MB/s Sequential Read * Performance may vary based on system hardware & configuration
Sequential Write Up to 520 MB/s Sequential Write * Performance may vary based on system hardware & configuration
Random Read (4KB, QD32) Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration
Random Write (4KB, QD32) Up to 90,000 IOPS Random Write * Performance may vary based on system hardware & configuration
Random Read (4KB, QD1) Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration
Random Write (4KB, QD1) Up to 42,000 IOPS Random Write * Performance may vary based on system hardware & configuration
Power Consumption *Average: 2.2 W*Maximum: 4.0 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 – 70 ℃ Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)

ADDITIONAL INFORMATION
Warranty:
3 Year Warranty
To Know Service Location : Please Visit :
https://www.samsung.com/in/support/service-center/
Note *:
Price’s Features & Specifications : Subject to change without Prior notice.*